inchange semiconductor isc product specification isc silicon npn power transistor 2SD1390 description high breakdown voltage- : v cbo = 1500v (min) high reliability applications designed for line-operated horiz ontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c collector current- continuous 1 a i cp collector current-pulse 2.5 a p c collector power dissipation @ t c 90 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1390 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 1a b 5.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 1a b 1.5 v v cb = 750v; i e = 0 50 a i cbo collector cutoff current v cb = 1500v; i e = 0 1 ma h fe dc current gain i c = 2a; v ce = 5v 2 7 t f fall time 1 s t stg storage time i c = 2.5a, i b end = 1.1a, l b = 10 h b 11 s isc website www.iscsemi.cn 2
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